SOME OPTICAL PROPERTIES OF ALUMINUM ARSENIDE

SOME OPTICAL PROPERTIES OF ALUMINUM ARSENIDE

Epitaxial AlAs was grown on GaAs substrates, and polycrystalline AlAs films were deposited on quartz. The visible optical absorption edge indicated that the direct band gap was 3.5 eV while the indirect gap was 2.2 eV. Infrared interference fringes were measured and the high-frequency dielectric con...

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Veröffentlicht in:Applied physics letters 1970-01, Vol.17 (9), p.358-360
1. Verfasser: Minden, H. T.
Format: Artikel
Sprache:eng
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Zusammenfassung:Epitaxial AlAs was grown on GaAs substrates, and polycrystalline AlAs films were deposited on quartz. The visible optical absorption edge indicated that the direct band gap was 3.5 eV while the indirect gap was 2.2 eV. Infrared interference fringes were measured and the high-frequency dielectric constant was determined to be 15.2. The transverse restrahl frequency was 400 cm−1.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1653433