SOME OPTICAL PROPERTIES OF ALUMINUM ARSENIDE
Epitaxial AlAs was grown on GaAs substrates, and polycrystalline AlAs films were deposited on quartz. The visible optical absorption edge indicated that the direct band gap was 3.5 eV while the indirect gap was 2.2 eV. Infrared interference fringes were measured and the high-frequency dielectric con...
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| Veröffentlicht in: | Applied physics letters 1970-01, Vol.17 (9), p.358-360 |
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| container_title | Applied physics letters |
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| creator | Minden, H. T. |
| description | Epitaxial AlAs was grown on GaAs substrates, and polycrystalline AlAs films were deposited on quartz. The visible optical absorption edge indicated that the direct band gap was 3.5 eV while the indirect gap was 2.2 eV. Infrared interference fringes were measured and the high-frequency dielectric constant was determined to be 15.2. The transverse restrahl frequency was 400 cm−1. |
| doi_str_mv | 10.1063/1.1653433 |
| format | Article |
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| fulltext | fulltext |
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| ispartof | Applied physics letters, 1970-01, Vol.17 (9), p.358-360 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1653433 |
| source | AIP Digital Archive |
| title | SOME OPTICAL PROPERTIES OF ALUMINUM ARSENIDE |
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