USE OF CHARACTERISTIC X RAYS TO MONITOR ANNEALING OF ION-IMPLANTED DIAMOND

USE OF CHARACTERISTIC X RAYS TO MONITOR ANNEALING OF ION-IMPLANTED DIAMOND

Bombardment of aligned type-IIa diamond substrates with 80-keV protons and simultaneous detection of the resulting characteristic carbon K x rays has revealed excellent channeling structure. This technique has been used to monitor the crystallinity of a surface implanted with P31+ ions. Crystallinit...

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Veröffentlicht in:Appl. Phys. Lett., 14: 295-7(May 1, 1969) 14: 295-7(May 1, 1969), 1969, Vol.14 (9), p.295-297
Hauptverfasser: Davidson, L. A., Gibbons, James F., Der, R. C., Kavanagh, T. M., Khan, J. M.
Format: Artikel
Sprache:eng
Schlagworte:
ANISOTROPY
ANNEALING
BOMBARDMENT
CRYSTALS
DIAMONDS
DIAMONDS/phosphorus-ion implantation in type-IIa, use of characteristic x rays from proton channeling to study annealing of
EMISSION
IMPURITIES
ION BEAMS
ION CHANNELING
ION IMPLANTATION
LATTICES
LAYERS
MOTION
N33110 -Physics (Solid State)-Radiation Effects
PHOSPHORUS
PHOSPHORUS 31
PHOSPHORUS IONS/ implantation into diamond, use of characteristic x rays to study annealing of
PROTON BEAMS
PROTONS/channeling in annealed phosphorus-ion- implanted diamond at 80 keV, characteristic x rays from
SURFACES
X RADIATION
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Zusammenfassung:Bombardment of aligned type-IIa diamond substrates with 80-keV protons and simultaneous detection of the resulting characteristic carbon K x rays has revealed excellent channeling structure. This technique has been used to monitor the crystallinity of a surface implanted with P31+ ions. Crystallinity was destroyed by P31+ does of the order of 1014/cm2. Vacuum annealing at 950°C restored the diamond cubic crystal structure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1652821