CONDUCTIVITY AND HALL MOBILITY OF ION-IMPLANTED SILICON IN SEMI-INSULATING GALLIUM ARSENIDE

Chromium-doped semi-insulating gallium arsenide has been successfully doped n-type by ion implantation of silicon. Annealing studies are presented which show that at annealing temperatures in excess of 600°C, conductivity and Hall mobility rise to values comparable to those expected for heavily dope...

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Veröffentlicht in:	Appl. Phys. Lett., 14: 311-13(May 15, 1969) 14: 311-13(May 15, 1969), 1969-01, Vol.14 (10), p.311-313
Hauptverfasser:	Sansbury, James D., Gibbons, James F.
Format:	Artikel
Sprache:	eng
Schlagworte:	ARSENIC COMPOUNDS- ARSENIDES- ELECTRIC CONDUCTIVITY- GALLIUM COMPOUNDS- HALL EFFECT GALLIUM ARSENIDES/electric conductivity of silicon ion-implanted chromium-doped GaAs GALLIUM ARSENIDES/Hall mobility in silicon ion- implanted chromium-doped GaAs IMPURITIES- ION BEAMS- SILICON N33100 -Physics (Solid State)
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Beschreibung
Zusammenfassung:	Chromium-doped semi-insulating gallium arsenide has been successfully doped n-type by ion implantation of silicon. Annealing studies are presented which show that at annealing temperatures in excess of 600°C, conductivity and Hall mobility rise to values comparable to those expected for heavily doped gallium arsenide.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.1652663