TUNNELING IN METAL-GLASS-SILICON STRUCTURES

TUNNELING IN METAL-GLASS-SILICON STRUCTURES

Low-temperature conductance peaks have been observed in tunneling measurements on aluminum-phosphosilicate glass-degenerate silicon sandwich structures. In magnetic fields up to 84 kOe these peaks split and, with certain assumptions, the g value for the impurity responsible for the peak is found to...

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Veröffentlicht in:Applied physics letters 1968-01, Vol.13 (7), p.221-222
1. Verfasser: Laibowitz, Robert B.
Format: Artikel
Sprache:eng
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Zusammenfassung:Low-temperature conductance peaks have been observed in tunneling measurements on aluminum-phosphosilicate glass-degenerate silicon sandwich structures. In magnetic fields up to 84 kOe these peaks split and, with certain assumptions, the g value for the impurity responsible for the peak is found to be 2.1 ± 0.1.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1652579