High-speed, short-channel polycrystalline silicon thin-film transistors

Results are presented on the performance of low-temperature, short-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs), with channel length down to 0.5 μm, and scaled gate oxide thickness down to 20 nm. Good TFT switching characteristics were obtained, and the uniformity of short-...

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Veröffentlicht in:	Applied physics letters 2004-01, Vol.84 (2), p.293-295
Hauptverfasser:	Brotherton, S. D., Glasse, C., Glaister, C., Green, P., Rohlfing, F., Ayres, J. R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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