S–d exchange interaction in GaN:Mn studied by electron paramagnetic resonance

S–d exchange interaction in GaN:Mn studied by electron paramagnetic resonance

We present the electron paramagnetic resonance investigations of GaN:Mn bulk crystals. The performed measurements revealed the Korringa scattering as the dominant spin relaxation mechanism in the investigated highly n-type GaN:Mn samples. The temperature dependence of the spin relaxation time determ...

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Veröffentlicht in:Applied physics letters 2003-12, Vol.83 (26), p.5428-5430
Hauptverfasser: Wolos, Agnieszka, Palczewska, Maria, Wilamowski, Zbyslaw, Kaminska, Maria, Twardowski, Andrzej, Bockowski, Michal, Grzegory, Izabella, Porowski, Sylwester
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Sprache:eng
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Zusammenfassung:We present the electron paramagnetic resonance investigations of GaN:Mn bulk crystals. The performed measurements revealed the Korringa scattering as the dominant spin relaxation mechanism in the investigated highly n-type GaN:Mn samples. The temperature dependence of the spin relaxation time determines the effective s–d exchange constant for such crystals {N0α}=14 meV. Weak exchange interaction between Mn2+ and GaN band electrons excludes carrier mediation as an origin of high-temperature ferromagnetism in n-type GaMnN.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1637451