C49-C54 phase transition in nanometric titanium disilicide grains

The formation of single C49-TiSi2 grains embedded in a polycrystalline Si matrix has been studied in detail by means of in-situ sheet resistance, x-ray diffraction measurements, and energy filtered transmission electron microscopy characterization. The C49 clusters were obtained by starting from a 3...

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Veröffentlicht in:Journal of applied physics 2004-02, Vol.95 (4), p.1977-1985
Hauptverfasser: Alessandrino, M. S., Privitera, S., Grimaldi, M. G., Bongiorno, C., Pannitteri, S., La Via, F.
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Sprache:eng
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Zusammenfassung:The formation of single C49-TiSi2 grains embedded in a polycrystalline Si matrix has been studied in detail by means of in-situ sheet resistance, x-ray diffraction measurements, and energy filtered transmission electron microscopy characterization. The C49 clusters were obtained by starting from a 3 nm-Ti/40 nm-Si multilayer structure. After the C49 clusters formation, increasing the temperature in the 800–1100 °C range, the first-order C49-C54 transition has been therefore investigated in a system without triple grains boundaries. At each temperature the C54 fraction initially increases with the annealing time until it reaches a maximum constant value within ∼80 s. The maximum value of the converted C54 fraction increases linearly with the annealing temperature in the studied range. The nucleation sites density in these samples is ∼2×1011 cm−2, several orders of magnitude higher than in continuous TiSi2 films, where this value is about 4×106 cm−2.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1635651