Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

The internal quantum efficiency (IQE) of highly-efficient near-UV light-emitting diodes, which shows an external quantum efficiency of 43% at 406 nm, has been measured by excitation power and temperature-dependent photoluminescence (PL). Assuming peak PL quantum efficiency at 8 K is 100%, peak IQE a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2003-12, Vol.83 (24), p.4906-4908
Hauptverfasser: Watanabe, Satoshi, Yamada, Norihide, Nagashima, Masakazu, Ueki, Yusuke, Sasaki, Chiharu, Yamada, Yoichi, Taguchi, Tsunemasa, Tadatomo, Kazuyuki, Okagawa, Hiroaki, Kudo, Hiromitsu
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The internal quantum efficiency (IQE) of highly-efficient near-UV light-emitting diodes, which shows an external quantum efficiency of 43% at 406 nm, has been measured by excitation power and temperature-dependent photoluminescence (PL). Assuming peak PL quantum efficiency at 8 K is 100%, peak IQE at 300 K was measured to be as high as 63%. At the injected carrier density, which corresponds to 20 mA current injection, IQE and light extraction efficiency were estimated to be about 54% and 80%, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1633672