4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

We demonstrate 4.5 mW output power from AlGaN-based single quantum well ultraviolet light-emitting diodes at a very short wavelength of 267 nm in pulsed operation mode. The output power in continuous-wave mode reaches a value of 165 μW at an injected current of 435 mA. The measurements were done on...

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Veröffentlicht in:Applied physics letters 2003-12, Vol.83 (23), p.4701-4703
Hauptverfasser: Yasan, A., McClintock, R., Mayes, K., Shiell, D., Gautero, L., Darvish, S. R., Kung, P., Razeghi, M.
Format: Artikel
Sprache:eng
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Zusammenfassung:We demonstrate 4.5 mW output power from AlGaN-based single quantum well ultraviolet light-emitting diodes at a very short wavelength of 267 nm in pulsed operation mode. The output power in continuous-wave mode reaches a value of 165 μW at an injected current of 435 mA. The measurements were done on arrays of four devices flip chip bonded to AlN submounts for thermal management.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1633019