Effect of high pressure isostatic annealing on oxygen segregation in Czochralski silicon

The effect of single-step annealing at 450, 650, and 1000 °C under gigapascal hydrostatic pressures on oxygen segregation from Czochralski silicon samples was investigated. It was shown that the effect of applied pressure on the oxygen segregation processes begins to be detectable at 650 °C and significant at 1000 °C. Not only was the effect of the applied pressure clearly evidenced, but also that of the dopants. In the first case the presence of a gap level associated to self-interstitial clusters could be argued, whereas in the second case both the oxide particles segregation and the dislocation formation were demonstrated to be enhanced by the pressure and by the type of doping. Furthermore, visible and ultraviolet photoluminescence emission at cryogenic temperatures were observed from silicon dioxide particles or from oxide nuclei contained in the silicon matrix.