Temperature dependence of intersubband transitions in InAs/AlSb quantum wells

We have carried out a systematic temperature-dependent study of intersubband absorption in InAs/AlSb quantum wells from 5 to 10 nm well width. The resonance energy redshifts with increasing temperature from 10 to 300 K, and the amount of redshift increases with decreasing well width. We have modeled the transitions using eight-band k⋅p theory combined with semiconductor Bloch equations, including the main many-body effects. Temperature is incorporated via band filling and nonparabolicity, and good agreement with experiment is achieved for the temperature dependence of the resonance.