Epitaxial growth of Fe3Si/GaAs(001) hybrid structures
We have established an optimized growth temperature range, namely, 150 °C
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2003-11, Vol.83 (19), p.3912-3914 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 3914 |
|---|---|
| container_issue | 19 |
| container_start_page | 3912 |
| container_title | Applied physics letters |
| container_volume | 83 |
| creator | Herfort, Jens Schönherr, Hans-Peter Ploog, Klaus H. |
| description | We have established an optimized growth temperature range, namely, 150 °C |
| doi_str_mv | 10.1063/1.1625426 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1625426</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1625426</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-e5dd9704305c8ba8488a463e4647703d84a96f3608bf07e1994600dd92af8b2d3</originalsourceid><addsrcrecordid>eNotj81OwkAURidGEyu68A26lEXh3rnzuyQE0ITEhbBupu2M1GBKZoYoby8GViff4nzJYewZYYKgaIoTVFwKrm5YgaB1RYjmlhUAQJWyEu_ZQ0pf5yk5UcHk4tBn99u7ffkZh5-8K4dQLj199NOVm6UXAByXu1MT-65MOR7bfIw-PbK74PbJP105YtvlYjN_rdbvq7f5bF213FKuvOw6q0EQyNY0zghjnFDkhRJaA3VGOKsCKTBNAO3RWqEAzg53wTS8oxEbX37bOKQUfagPsf928VQj1P-9NdbXXvoDBoREtw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Epitaxial growth of Fe3Si/GaAs(001) hybrid structures</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Herfort, Jens ; Schönherr, Hans-Peter ; Ploog, Klaus H.</creator><creatorcontrib>Herfort, Jens ; Schönherr, Hans-Peter ; Ploog, Klaus H.</creatorcontrib><description>We have established an optimized growth temperature range, namely, 150 °C<TG<250 °C, where ferromagnetic Fe3Si/GaAs(001) hybrid structures with high crystalline and interfacial quality can be fabricated by molecular-beam epitaxy. The composition of the Fe3Si layers, which can be regarded as a Heusler alloy, was tuned within the stable Fe3Si phase. The layers show high magnetic moments with a value of 1050 emu/cm3, which is close to that of bulk Fe3Si.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1625426</identifier><language>eng</language><ispartof>Applied physics letters, 2003-11, Vol.83 (19), p.3912-3914</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-e5dd9704305c8ba8488a463e4647703d84a96f3608bf07e1994600dd92af8b2d3</citedby><cites>FETCH-LOGICAL-c293t-e5dd9704305c8ba8488a463e4647703d84a96f3608bf07e1994600dd92af8b2d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Herfort, Jens</creatorcontrib><creatorcontrib>Schönherr, Hans-Peter</creatorcontrib><creatorcontrib>Ploog, Klaus H.</creatorcontrib><title>Epitaxial growth of Fe3Si/GaAs(001) hybrid structures</title><title>Applied physics letters</title><description>We have established an optimized growth temperature range, namely, 150 °C<TG<250 °C, where ferromagnetic Fe3Si/GaAs(001) hybrid structures with high crystalline and interfacial quality can be fabricated by molecular-beam epitaxy. The composition of the Fe3Si layers, which can be regarded as a Heusler alloy, was tuned within the stable Fe3Si phase. The layers show high magnetic moments with a value of 1050 emu/cm3, which is close to that of bulk Fe3Si.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotj81OwkAURidGEyu68A26lEXh3rnzuyQE0ITEhbBupu2M1GBKZoYoby8GViff4nzJYewZYYKgaIoTVFwKrm5YgaB1RYjmlhUAQJWyEu_ZQ0pf5yk5UcHk4tBn99u7ffkZh5-8K4dQLj199NOVm6UXAByXu1MT-65MOR7bfIw-PbK74PbJP105YtvlYjN_rdbvq7f5bF213FKuvOw6q0EQyNY0zghjnFDkhRJaA3VGOKsCKTBNAO3RWqEAzg53wTS8oxEbX37bOKQUfagPsf928VQj1P-9NdbXXvoDBoREtw</recordid><startdate>20031110</startdate><enddate>20031110</enddate><creator>Herfort, Jens</creator><creator>Schönherr, Hans-Peter</creator><creator>Ploog, Klaus H.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20031110</creationdate><title>Epitaxial growth of Fe3Si/GaAs(001) hybrid structures</title><author>Herfort, Jens ; Schönherr, Hans-Peter ; Ploog, Klaus H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-e5dd9704305c8ba8488a463e4647703d84a96f3608bf07e1994600dd92af8b2d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Herfort, Jens</creatorcontrib><creatorcontrib>Schönherr, Hans-Peter</creatorcontrib><creatorcontrib>Ploog, Klaus H.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Herfort, Jens</au><au>Schönherr, Hans-Peter</au><au>Ploog, Klaus H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial growth of Fe3Si/GaAs(001) hybrid structures</atitle><jtitle>Applied physics letters</jtitle><date>2003-11-10</date><risdate>2003</risdate><volume>83</volume><issue>19</issue><spage>3912</spage><epage>3914</epage><pages>3912-3914</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We have established an optimized growth temperature range, namely, 150 °C<TG<250 °C, where ferromagnetic Fe3Si/GaAs(001) hybrid structures with high crystalline and interfacial quality can be fabricated by molecular-beam epitaxy. The composition of the Fe3Si layers, which can be regarded as a Heusler alloy, was tuned within the stable Fe3Si phase. The layers show high magnetic moments with a value of 1050 emu/cm3, which is close to that of bulk Fe3Si.</abstract><doi>10.1063/1.1625426</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2003-11, Vol.83 (19), p.3912-3914 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1625426 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Epitaxial growth of Fe3Si/GaAs(001) hybrid structures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T08%3A00%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Epitaxial%20growth%20of%20Fe3Si/GaAs(001)%20hybrid%20structures&rft.jtitle=Applied%20physics%20letters&rft.au=Herfort,%20Jens&rft.date=2003-11-10&rft.volume=83&rft.issue=19&rft.spage=3912&rft.epage=3914&rft.pages=3912-3914&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1625426&rft_dat=%3Ccrossref%3E10_1063_1_1625426%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |