Decomposition of interfacial SiO2 during HfO2 deposition

Decomposition of interfacial SiO2 during HfO2 deposition

Growth of HfO2 by Hf deposition in an oxidizing ambient is found to cause removal of interfacial SiO2. Medium-energy ion scattering results show that the reaction takes place during growth, and involves transport of oxygen through the HfO2 layer. An examination of the temperature dependence suggests...

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Veröffentlicht in:Applied physics letters 2003-10, Vol.83 (16), p.3398-3400
Hauptverfasser: Copel, M., Reuter, M. C.
Format: Artikel
Sprache:eng
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Zusammenfassung:Growth of HfO2 by Hf deposition in an oxidizing ambient is found to cause removal of interfacial SiO2. Medium-energy ion scattering results show that the reaction takes place during growth, and involves transport of oxygen through the HfO2 layer. An examination of the temperature dependence suggests that oxygen vacancy reactions are responsible.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1621734