Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix

We report a low-temperature photoluminescence study of 4H/3C/4H-SiC single quantum wells. A quantum well consists of thirteen 3C-SiC bilayers as displayed in a high-resolution transmission electron microscope image. The optical emission energy of the quantum well is more than 200 meV below the excit...

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Veröffentlicht in:Applied physics letters 2003-10, Vol.83 (15), p.3171-3173
Hauptverfasser: Bai, S., Devaty, R. P., Choyke, W. J., Kaiser, U., Wagner, G., MacMillan, M. F.
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Sprache:eng
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Zusammenfassung:We report a low-temperature photoluminescence study of 4H/3C/4H-SiC single quantum wells. A quantum well consists of thirteen 3C-SiC bilayers as displayed in a high-resolution transmission electron microscope image. The optical emission energy of the quantum well is more than 200 meV below the exciton band gap of bulk 3C-SiC. A strong internal electric field on the order of 1 MV/cm leads to the large redshift of the emission energy due to the quantum-confined Stark effect. The origin of this field is discussed in terms of the spontaneous polarization difference between 3C- and 4H-SiC.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1618020