Band bending of LiF/Alq3 interface in organic light-emitting diodes

The insertion of LiF for an interlayer material between the Al cathode and tris-(8-hydroxyquinoline) aluminum (Alq3) in the organic light-emitting diodes (OLEDs) provides an improved device performance. The highly occupied molecular orbital (HOMO) level lowering in the Alq3 layer induced by a low-co...

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Veröffentlicht in:	Applied physics letters 2003-10, Vol.83 (14), p.2949-2951
Hauptverfasser:	Ihm, Kyuwook, Kang, Tai-Hee, Kim, Ki-Jeong, Hwang, Chan-Cuk, Park, Yong-Jun, Lee, Ki-Bong, Kim, Bongsoo, Jeon, Cheol-Ho, Park, Chong-Yun, Kim, Kibeom, Tak, Yoon-Heung
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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