Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

We have studied electron mobility behavior in asymmetric double-gate silicon on insulator (DGSOI) inversion layers, and compared it to the mobility in symmetric double-gate silicon on insulator devices, where volume inversion has previously been shown to play a very important role, being responsible...

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Veröffentlicht in:	Journal of applied physics 2003-11, Vol.94 (9), p.5732-5741
Hauptverfasser:	Gámiz, F., Roldán, J. B., Godoy, A., Cartujo-Cassinello, P., Carceller, J. E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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