Doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells
We show that proper doping of the barrier regions can convert the well-known type-II InAs/AlSb quantum wells (QWs) to type I, producing strong interband transitions comparable to regular type-I QWs. The interband gain for TM mode is as high as 4000 1/cm, thus providing an important alternative mater...
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Veröffentlicht in: | Applied physics letters 2003-08, Vol.83 (8), p.1581-1583 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We show that proper doping of the barrier regions can convert the well-known type-II InAs/AlSb quantum wells (QWs) to type I, producing strong interband transitions comparable to regular type-I QWs. The interband gain for TM mode is as high as 4000 1/cm, thus providing an important alternative material system in the midinfrared wavelength range. We also study the TE and TM gain as functions of doping level and intrinsic electron–hole density. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1605236 |