Doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells

We show that proper doping of the barrier regions can convert the well-known type-II InAs/AlSb quantum wells (QWs) to type I, producing strong interband transitions comparable to regular type-I QWs. The interband gain for TM mode is as high as 4000 1/cm, thus providing an important alternative mater...

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Veröffentlicht in:Applied physics letters 2003-08, Vol.83 (8), p.1581-1583
Hauptverfasser: Kolokolov, K. I., Ning, C. Z.
Format: Artikel
Sprache:eng
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Zusammenfassung:We show that proper doping of the barrier regions can convert the well-known type-II InAs/AlSb quantum wells (QWs) to type I, producing strong interband transitions comparable to regular type-I QWs. The interband gain for TM mode is as high as 4000 1/cm, thus providing an important alternative material system in the midinfrared wavelength range. We also study the TE and TM gain as functions of doping level and intrinsic electron–hole density.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1605236