Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability

In this letter, we report a first-principles calculation which is well correlated to experiment on the role of nitrogen at Si/SiOxNy interface in negative bias temperature instability (NBTI). Our calculation shows that nitrogen’s lone pair electrons can trap dissociated hydrogen species more easily...

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Veröffentlicht in:	Applied physics letters 2003-07, Vol.83 (3), p.530-532
Hauptverfasser:	Tan, Shyue Seng, Chen, T. P., Soon, Jia Mei, Loh, Kian Ping, Ang, C. H., Teo, W. Y., Chan, L.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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