Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability

In this letter, we report a first-principles calculation which is well correlated to experiment on the role of nitrogen at Si/SiOxNy interface in negative bias temperature instability (NBTI). Our calculation shows that nitrogen’s lone pair electrons can trap dissociated hydrogen species more easily...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2003-07, Vol.83 (3), p.530-532
Hauptverfasser: Tan, Shyue Seng, Chen, T. P., Soon, Jia Mei, Loh, Kian Ping, Ang, C. H., Teo, W. Y., Chan, L.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this letter, we report a first-principles calculation which is well correlated to experiment on the role of nitrogen at Si/SiOxNy interface in negative bias temperature instability (NBTI). Our calculation shows that nitrogen’s lone pair electrons can trap dissociated hydrogen species more easily than oxygen. After trapping, a positive charge complex is formed and weakening of bond strength is observed at trapping site. Furthermore, as nitrogen concentration goes beyond 8 at. %, the neighboring effect from nitrogen starts to play a role in further degradation. The interfacial nitrogen dependence of the NBTI-induced defect generation is found to coincide with that of the H+-trapping reaction energy. Eventually, a linear correlation is found between the reaction energy and the defect generation. This provides an insight into nitrogen-enhanced NBTI.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1593211