Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability
In this letter, we report a first-principles calculation which is well correlated to experiment on the role of nitrogen at Si/SiOxNy interface in negative bias temperature instability (NBTI). Our calculation shows that nitrogen’s lone pair electrons can trap dissociated hydrogen species more easily...
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Veröffentlicht in: | Applied physics letters 2003-07, Vol.83 (3), p.530-532 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this letter, we report a first-principles calculation which is well correlated to experiment on the role of nitrogen at Si/SiOxNy interface in negative bias temperature instability (NBTI). Our calculation shows that nitrogen’s lone pair electrons can trap dissociated hydrogen species more easily than oxygen. After trapping, a positive charge complex is formed and weakening of bond strength is observed at trapping site. Furthermore, as nitrogen concentration goes beyond 8 at. %, the neighboring effect from nitrogen starts to play a role in further degradation. The interfacial nitrogen dependence of the NBTI-induced defect generation is found to coincide with that of the H+-trapping reaction energy. Eventually, a linear correlation is found between the reaction energy and the defect generation. This provides an insight into nitrogen-enhanced NBTI. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1593211 |