Electrical and optical proprieties of photodiodes based on ZnSe material

Based on the spectral response and I–V measurements, the physical mechanism responsible for electrical conduction and optical response have been suggested. The Schottky diode response remains quite flat for energies above the gap, an advantage in comparison with the p–i–n photodiode. The obtained result showed a high leakage resistance for Schottky photodiode explained by the presence of the defect at the metal/semiconductor interface.