Mixing characteristics of InGaAs metal–semiconductor–metal photodetectors with Schottky enhancement layers

We report on the optoelectronic (OE) mixing characteristics of a Schottky-enhanced InGaAs-based metal–semiconductor–metal photodetector (MSM–PD). The measured frequency bandwidth of such a mixer is less than that of a corresponding photodetector. The mixing efficiency depends on the light modulation...

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Veröffentlicht in:	Applied physics letters 2003-06, Vol.82 (22), p.3814-3816
Hauptverfasser:	Shen, H., Aliberti, K., Stann, B., Newman, P., Mehandru, R., Ren, F.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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