Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1−xSb
In AlxGa1−xSb, the Te impurity originates a simple donor state (D level), whose occupancy equilibrates rapidly with the conduction band; it coexists with a DX state which is responsible for the persistent photoconductivity effect. The D level is linked to the L conduction band minima and becomes res...
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| Veröffentlicht in: | Journal of applied physics 2003-06, Vol.93 (12), p.9743-9748 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | In AlxGa1−xSb, the Te impurity originates a simple donor state (D level), whose occupancy equilibrates rapidly with the conduction band; it coexists with a DX state which is responsible for the persistent photoconductivity effect. The D level is linked to the L conduction band minima and becomes resonant with the conduction band for x |
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| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.1574671 |