Reduced critical thickness for relaxing heteroepitaxial films on compliant substrates
It is argued that heteroepitaxial thin films (layers) grown on a compliant substrate are not able to relax their strain elastically by large-area slip across a “weak” layer. Instead, the Matthews model of plastic relaxation is modified by supposing that the interfacial misfit dislocations relax thei...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2003-05, Vol.82 (19), p.3209-3211 |
---|---|
Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | It is argued that heteroepitaxial thin films (layers) grown on a compliant substrate are not able to relax their strain elastically by large-area slip across a “weak” layer. Instead, the Matthews model of plastic relaxation is modified by supposing that the interfacial misfit dislocations relax their strain field or even disappear into the weak layer. Consequently, the moving film-threading dislocations experience a reduced drag force. Therefore, the critical film thickness is lowered, in contrast to the enhanced thickness predicted by current theories. A quantitative estimate is given which depends on the nature of the weak layer. Implications include a larger free slip path and potentially a lower density of film-threading dislocations. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1573355 |