AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

We demonstrated that Sc2O3 thin films deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate oxide and as a surface passivation layer on AlGaN/GaN high electron mobility transistors (HEMTs). The maximum drain source current, IDS, reaches a value of over 0.8 A/mm and...

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Veröffentlicht in:Applied physics letters 2003-04, Vol.82 (15), p.2530-2532
Hauptverfasser: Mehandru, R., Luo, B., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A.
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Sprache:eng
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Zusammenfassung:We demonstrated that Sc2O3 thin films deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate oxide and as a surface passivation layer on AlGaN/GaN high electron mobility transistors (HEMTs). The maximum drain source current, IDS, reaches a value of over 0.8 A/mm and is ∼40% higher on Sc2O3/AlGaN/GaN transistors relative to conventional HEMTs fabricated on the same wafer. The metal–oxide–semiconductor HEMTs (MOS–HEMTs) threshold voltage is in good agreement with the theoretical value, indicating that Sc2O3 retains a low surface state density on the AlGaN/GaN structures and effectively eliminates the collapse in drain current seen in unpassivated devices. The MOS-HEMTs can be modulated to +6 V of gate voltage. In particular, Sc2O3 is a very promising candidate as a gate dielectric and surface passivant because it is more stable on GaN than is MgO.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1567051