Amorphous-crystalline transition at the Ir/Si(100) interface
The amorphous-crystalline transition at the Ir/Si(100) interface has been characterized by using both low-energy electron diffraction (LEED) and synchrotron-based photoemission. Solid-state amorphization occurred at the Ir/Si(100)-2×1 interface deposited at 600 °C. The double domain Si(100)-2×1 LEED...
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Veröffentlicht in: | Journal of applied physics 2003-05, Vol.93 (10), p.6248-6251 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The amorphous-crystalline transition at the Ir/Si(100) interface has been characterized by using both low-energy electron diffraction (LEED) and synchrotron-based photoemission. Solid-state amorphization occurred at the Ir/Si(100)-2×1 interface deposited at 600 °C. The double domain Si(100)-2×1 LEED pattern disappeared when 1 ML Ir was deposited onto Si(100). Three types of Ir–Si bonding formed on Si(100) at 1 ML Ir coverage and gradually evolved to be amorphous IrSi, Ir3Si5, and IrxSiy (unidentified) bonding environments at Ir coverage less than ∼3 ML. The amorphous Ir–Si reacted layer was grown layer–by–layer-like. An Ir3Si5 crystalline phase, accompanying with amorphous IrSi and IrxSiy alloys, started to form on top of the amorphous Ir–Si reacted layer at Ir coverage near ∼3 ML. The Ir3Si5 crystalline phase was evolved from its corresponding Ir3Si5 amorphous bonding environment in the Ir–Si reacted layer. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.1563296 |