Amorphous-crystalline transition at the Ir/Si(100) interface

The amorphous-crystalline transition at the Ir/Si(100) interface has been characterized by using both low-energy electron diffraction (LEED) and synchrotron-based photoemission. Solid-state amorphization occurred at the Ir/Si(100)-2×1 interface deposited at 600 °C. The double domain Si(100)-2×1 LEED...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2003-05, Vol.93 (10), p.6248-6251
Hauptverfasser: Ouyang, C.-P., Chang, J.-J., Wen, J.-F., Tien, L.-C., Hwang, J., Pi, Tun-Wen
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The amorphous-crystalline transition at the Ir/Si(100) interface has been characterized by using both low-energy electron diffraction (LEED) and synchrotron-based photoemission. Solid-state amorphization occurred at the Ir/Si(100)-2×1 interface deposited at 600 °C. The double domain Si(100)-2×1 LEED pattern disappeared when 1 ML Ir was deposited onto Si(100). Three types of Ir–Si bonding formed on Si(100) at 1 ML Ir coverage and gradually evolved to be amorphous IrSi, Ir3Si5, and IrxSiy (unidentified) bonding environments at Ir coverage less than ∼3 ML. The amorphous Ir–Si reacted layer was grown layer–by–layer-like. An Ir3Si5 crystalline phase, accompanying with amorphous IrSi and IrxSiy alloys, started to form on top of the amorphous Ir–Si reacted layer at Ir coverage near ∼3 ML. The Ir3Si5 crystalline phase was evolved from its corresponding Ir3Si5 amorphous bonding environment in the Ir–Si reacted layer.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1563296