Effect of composition on the band gap of strained InxGa1−xN alloys

Effect of composition on the band gap of strained InxGa1−xN alloys

The band gap of pseudomorphically strained InxGa1−xN alloys has been measured using optical absorption spectroscopy. X-ray diffraction measurements indicated that the in-plane lattice parameter of the InxGa1−xN film equaled that of the underlying GaN layer. For strained InxGa1−xN, it was determined...

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Veröffentlicht in:Journal of applied physics 2003-04, Vol.93 (7), p.4340-4342
Hauptverfasser: McCluskey, M. D., Van de Walle, C. G., Romano, L. T., Krusor, B. S., Johnson, N. M.
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container_end_page 4342
container_issue 7
container_start_page 4340
container_title Journal of applied physics
container_volume 93
creator McCluskey, M. D.
Van de Walle, C. G.
Romano, L. T.
Krusor, B. S.
Johnson, N. M.
description The band gap of pseudomorphically strained InxGa1−xN alloys has been measured using optical absorption spectroscopy. X-ray diffraction measurements indicated that the in-plane lattice parameter of the InxGa1−xN film equaled that of the underlying GaN layer. For strained InxGa1−xN, it was determined that the band gap shift versus composition is given by dEg/dx=−4.1 eV for x
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title Effect of composition on the band gap of strained InxGa1−xN alloys
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