Effect of composition on the band gap of strained InxGa1−xN alloys

Effect of composition on the band gap of strained InxGa1−xN alloys

The band gap of pseudomorphically strained InxGa1−xN alloys has been measured using optical absorption spectroscopy. X-ray diffraction measurements indicated that the in-plane lattice parameter of the InxGa1−xN film equaled that of the underlying GaN layer. For strained InxGa1−xN, it was determined...

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Veröffentlicht in:Journal of applied physics 2003-04, Vol.93 (7), p.4340-4342
Hauptverfasser: McCluskey, M. D., Van de Walle, C. G., Romano, L. T., Krusor, B. S., Johnson, N. M.
Format: Artikel
Sprache:eng
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Zusammenfassung:The band gap of pseudomorphically strained InxGa1−xN alloys has been measured using optical absorption spectroscopy. X-ray diffraction measurements indicated that the in-plane lattice parameter of the InxGa1−xN film equaled that of the underlying GaN layer. For strained InxGa1−xN, it was determined that the band gap shift versus composition is given by dEg/dx=−4.1 eV for x
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1560563