Strain-driven facet formation on self-assembled InAs islands on GaAs (311)A
The shape of InAs three-dimensional islands grown on GaAs(311)A substrates by molecular-beam epitaxy was investigated by in situ scanning tunneling microscopy. The island is found to be laterally surrounded by (111)A and {110} facets together with a convex curved region close to the (100) facet. The...
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| Veröffentlicht in: | Applied physics letters 2003-03, Vol.82 (11), p.1688-1690 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The shape of InAs three-dimensional islands grown on GaAs(311)A substrates by molecular-beam epitaxy was investigated by in situ scanning tunneling microscopy. The island is found to be laterally surrounded by (111)A and {110} facets together with a convex curved region close to the (100) facet. The top ridge of the islands is atomically resolved to be the most recently discovered high-index surface {11,5,2}. This observation points to the importance of the study of nanostructure growth on high-index surfaces and their characterization. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.1559945 |