Magnetotransport measurements through stacked InAs self-assembled quantum dots

We report on low temperature magnetotunneling measurements through an AlAs/GaAs n-i-n diode incorporating stacked double layers of InAs self-assembled quantum dots (SAQDs). We observe that two strong conductance peaks at zero magnetic field (B) are split into four peaks at high B values. The double...

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Veröffentlicht in:Applied physics letters 2003-02, Vol.82 (8), p.1230-1232
Hauptverfasser: Son, M. H., Oh, J. H., Jeong, D. Y., Ahn, D., Jun, M. S., Hwang, S. W., Oh, J. E., Engel, L. W.
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Sprache:eng
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Zusammenfassung:We report on low temperature magnetotunneling measurements through an AlAs/GaAs n-i-n diode incorporating stacked double layers of InAs self-assembled quantum dots (SAQDs). We observe that two strong conductance peaks at zero magnetic field (B) are split into four peaks at high B values. The double conductance peaks are interpreted as due to the conduction through the symmetric and antisymmetric states of coupled SAQDs. The separations between conductance peaks at B=0 and at B=18 T are consistent with the calculated energy separation between the symmetric and the antisymmetric states and with the previously reported Zeeman splitting, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1557774