Magnetotransport measurements through stacked InAs self-assembled quantum dots
We report on low temperature magnetotunneling measurements through an AlAs/GaAs n-i-n diode incorporating stacked double layers of InAs self-assembled quantum dots (SAQDs). We observe that two strong conductance peaks at zero magnetic field (B) are split into four peaks at high B values. The double...
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Veröffentlicht in: | Applied physics letters 2003-02, Vol.82 (8), p.1230-1232 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report on low temperature magnetotunneling measurements through an AlAs/GaAs n-i-n diode incorporating stacked double layers of InAs self-assembled quantum dots (SAQDs). We observe that two strong conductance peaks at zero magnetic field (B) are split into four peaks at high B values. The double conductance peaks are interpreted as due to the conduction through the symmetric and antisymmetric states of coupled SAQDs. The separations between conductance peaks at B=0 and at B=18 T are consistent with the calculated energy separation between the symmetric and the antisymmetric states and with the previously reported Zeeman splitting, respectively. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1557774 |