High-accuracy determination of the dependence of the photoluminescence emission energy on alloy composition in AlxGa1−xAs films

High-accuracy determination of the dependence of the photoluminescence emission energy on alloy composition in AlxGa1−xAs films

In an effort to improve the accuracy of photoluminescence (PL) measurements of the Al mole fraction (x) of AlxGa1−xAs alloys, the PL peak emission energy, EPL,peak, was measured at room temperature for molecular-beam epitaxy-grown AlxGa1−xAs films with 0⩽x

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Veröffentlicht in:Journal of applied physics 2003-04, Vol.93 (7), p.3747-3759
Hauptverfasser: Robins, Lawrence H., Armstrong, John T., Marinenko, Ryna B., Paul, Albert J., Pellegrino, Joseph G., Bertness, Kristine A.
Format: Artikel
Sprache:eng
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Zusammenfassung:In an effort to improve the accuracy of photoluminescence (PL) measurements of the Al mole fraction (x) of AlxGa1−xAs alloys, the PL peak emission energy, EPL,peak, was measured at room temperature for molecular-beam epitaxy-grown AlxGa1−xAs films with 0⩽x
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1556554