Influence of in situ applied stress during thermal oxidation of (111)Si on Pb interface defects

The results of a series of experiments are reported in which constant, controlled levels of in-plane stress were applied in situ to oxidizing (111) silicon substrates. Electron spin resonance measurements show that the properties of inherently incorporated electrically active Pb defects at the (111)...

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Veröffentlicht in:	Applied physics letters 2003-05, Vol.82 (18), p.3038-3040
Hauptverfasser:	Stesmans, A., Pierreux, D., Jaccodine, R. J., Lin, M.-T., Delph, T. J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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