Origin of the efficient light emission from inversion domain boundaries in GaN
Intentionally produced inversion domain boundaries in GaN have been reported to be highly efficient shallow recombination centers. This letter report a rationale for this phenomenon based on ab initio density-functional calculations. A model is also proposed, based on the existence of polarization i...
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Veröffentlicht in: | Applied physics letters 2003-02, Vol.82 (8), p.1182-1184 |
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Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Intentionally produced inversion domain boundaries in GaN have been reported to be highly efficient shallow recombination centers. This letter report a rationale for this phenomenon based on ab initio density-functional calculations. A model is also proposed, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1554776 |