Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor
We describe an n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor, formed via wafer fusion of a p-GaAs base to an n-GaN collector. Wafer fusion was carried out at 750 °C for 1 h. Devices utilized a thick base (0.15 μm) and exhibited limited common-emitter current gain (0.2–0.5) at an output cur...
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Veröffentlicht in: | Applied physics letters 2003-02, Vol.82 (5), p.820-822 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We describe an n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor, formed via wafer fusion of a p-GaAs base to an n-GaN collector. Wafer fusion was carried out at 750 °C for 1 h. Devices utilized a thick base (0.15 μm) and exhibited limited common-emitter current gain (0.2–0.5) at an output current density of ∼100 A/cm2. Devices were operated to VCE greater than 20 V, with a low VCE offset (1 V). Improvements in both device structure and wafer fusion conditions should provide further improvements in device performance. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1541946 |