Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor

We describe an n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor, formed via wafer fusion of a p-GaAs base to an n-GaN collector. Wafer fusion was carried out at 750 °C for 1 h. Devices utilized a thick base (0.15 μm) and exhibited limited common-emitter current gain (0.2–0.5) at an output cur...

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Veröffentlicht in:Applied physics letters 2003-02, Vol.82 (5), p.820-822
Hauptverfasser: Estrada, Sarah, Xing, Huili, Stonas, Andreas, Huntington, Andrew, Mishra, Umesh, DenBaars, Steven, Coldren, Larry, Hu, Evelyn
Format: Artikel
Sprache:eng
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Zusammenfassung:We describe an n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor, formed via wafer fusion of a p-GaAs base to an n-GaN collector. Wafer fusion was carried out at 750 °C for 1 h. Devices utilized a thick base (0.15 μm) and exhibited limited common-emitter current gain (0.2–0.5) at an output current density of ∼100 A/cm2. Devices were operated to VCE greater than 20 V, with a low VCE offset (1 V). Improvements in both device structure and wafer fusion conditions should provide further improvements in device performance.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1541946