Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates

We investigated the formation of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on SiO2-patterned 1°, 2°, and 5°-off (001) GaAs substrates by selective area metalorganic vapor phase epitaxy technique. The SiO2 patterns were filled with various stripe opening windows along the misorientation...

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Veröffentlicht in:Applied physics letters 2002-12, Vol.81 (27), p.5147-5149
Hauptverfasser: Kim, Hyo Jin, Motohisa, Junichi, Fukui, Takashi
Format: Artikel
Sprache:eng
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Zusammenfassung:We investigated the formation of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on SiO2-patterned 1°, 2°, and 5°-off (001) GaAs substrates by selective area metalorganic vapor phase epitaxy technique. The SiO2 patterns were filled with various stripe opening windows along the misorientation direction of the substrates. During the growth of the GaAs buffer layer on the opening regions, the steps on the (001) top facet was affected by the widths of the (001) top facet and the misorientation angles of the substrates. Single- or double-row aligned In0.8Ga0.2As SAQDs having definite interval were successfully fabricated on the (001) top facet with optimized top width and periodicity of step bunching. These results indicate that the selective growth technique of SAQDs by utilizing SiO2-patterned vicinal substrates is promising for nanoelectronic device applications such as single-electron memory devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1534385