Quantum dot formation by segregation enhanced CdSe reorganization

The influence of the growth conditions during capping of CdSe/ZnSe quantum structures grown on GaAs(001) by molecular-beam epitaxy (MBE) were systematically investigated by high-resolution x-ray diffraction, transmission electron microscopy, and temperature dependent, partly time-resolved photoluminescence spectroscopy. The results clearly indicate formation of quantum wells with potential fluctuations if conventional MBE is used for capping the CdSe by ZnSe. In contrast, quantum dot formation occurs using migration enhanced epitaxy for this growth step. In the latter case, quantum dots can be obtained without formation of stacking faults.