Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence

A technique utilizing continuous-wave two-photon absorption has been developed for optically sectioning and imaging deep into GaN structures. Imaging at depths greater than 20 μm below the surface of a coalesced pendeo-epitaxial GaN sample is demonstrated. Free and donor-bound excitonic emission in...

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Veröffentlicht in:Applied physics letters 2002-09, Vol.81 (11), p.1984-1986
Hauptverfasser: Schuck, P. J., Grober, R. D., Roskowski, A. M., Einfeldt, S., Davis, R. F.
Format: Artikel
Sprache:eng
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Zusammenfassung:A technique utilizing continuous-wave two-photon absorption has been developed for optically sectioning and imaging deep into GaN structures. Imaging at depths greater than 20 μm below the surface of a coalesced pendeo-epitaxial GaN sample is demonstrated. Free and donor-bound excitonic emission in this sample appears to originate at the surface, acceptor-bound exciton transitions are strongest in the top bulk portion of the sample, and subgap luminescence is most intense deep in the sample. The depth resolution of the imaging system is measured to be 1.75 μm near the GaN surface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1506948