Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template

We demonstrate the formation of well-defined InAs quantum dot (QD) arrays by self-organized engineering of anisotropic strain in a (In,Ga)As/GaAs superlattice (SL). Due to the accumulation and improvement of the uniformity of the strain-field modulation along [011], formation of InAs QD arrays along...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2002-08, Vol.81 (9), p.1705-1707
Hauptverfasser: Mano, T., Nötzel, R., Hamhuis, G. J., Eijkemans, T. J., Wolter, J. H.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We demonstrate the formation of well-defined InAs quantum dot (QD) arrays by self-organized engineering of anisotropic strain in a (In,Ga)As/GaAs superlattice (SL). Due to the accumulation and improvement of the uniformity of the strain-field modulation along [011], formation of InAs QD arrays along [0-11] with 140 nm lateral periodicity is clearly observed on the SL template when the number of SL periods is larger than ten. By enhancing the In adatom surface migration length at low growth rates, clear arrays of single InAs QDs are obtained. The QD arrays exhibit strong photoluminescence efficiency that is not reduced compared to that from InAs QD layers on GaAs. Hence, ordering by self-organized anisotropic strain engineering maintains the high structural quality of InAs QDs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1503872