Orthogonal pinning of two ferromagnetic layers in a synthetic spin valve

Orthogonal pinning of two ferromagnetic layers in a synthetic spin valve

A method for pinning synthetic antiferromagnet (SAF) based spin valves is presented, which allows pinning to be established perpendicular to the setting field H. As the SAF(AP1/Ru/AP2) magnetizes, its layer moments undergo a spin–flop transition for a magnetic field H=HSF and align with H for H=HSat...

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Veröffentlicht in:Applied physics letters 2002-06, Vol.80 (24), p.4576-4578
Hauptverfasser: Beach, Robert S., McCord, Jeffrey, Webb, Patrick, Mauri, Daniele
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container_title Applied physics letters
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creator Beach, Robert S.
McCord, Jeffrey
Webb, Patrick
Mauri, Daniele
description A method for pinning synthetic antiferromagnet (SAF) based spin valves is presented, which allows pinning to be established perpendicular to the setting field H. As the SAF(AP1/Ru/AP2) magnetizes, its layer moments undergo a spin–flop transition for a magnetic field H=HSF and align with H for H=HSat. The magnetization of layer AP1 is perpendicular to H for a field H=HGold. This field corresponds to the maximum giant magnetoresistance GMR on HSF
doi_str_mv 10.1063/1.1485106
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title Orthogonal pinning of two ferromagnetic layers in a synthetic spin valve
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