Orthogonal pinning of two ferromagnetic layers in a synthetic spin valve
A method for pinning synthetic antiferromagnet (SAF) based spin valves is presented, which allows pinning to be established perpendicular to the setting field H. As the SAF(AP1/Ru/AP2) magnetizes, its layer moments undergo a spin–flop transition for a magnetic field H=HSF and align with H for H=HSat...
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Veröffentlicht in: | Applied physics letters 2002-06, Vol.80 (24), p.4576-4578 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A method for pinning synthetic antiferromagnet (SAF) based spin valves is presented, which allows pinning to be established perpendicular to the setting field H. As the SAF(AP1/Ru/AP2) magnetizes, its layer moments undergo a spin–flop transition for a magnetic field H=HSF and align with H for H=HSat. The magnetization of layer AP1 is perpendicular to H for a field H=HGold. This field corresponds to the maximum giant magnetoresistance GMR on HSF |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1485106 |