Effect of plasma and thermal annealing on optical and electronic properties of SnO2 substrates used for a-Si solar cells
The sensitivity to various types of annealing treatments of three commercially available textured SnO2 substrate materials was investigated using optical transmission and Hall effect measurements. The treatments included H2 plasma and annealing in H2/Ar, Ar, or air from 100 to 400 °C. With both type...
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| Veröffentlicht in: | Journal of applied physics 2002-07, Vol.92 (1), p.620-626 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The sensitivity to various types of annealing treatments of three commercially available textured SnO2 substrate materials was investigated using optical transmission and Hall effect measurements. The treatments included H2 plasma and annealing in H2/Ar, Ar, or air from 100 to 400 °C. With both types of H2 treatments, the mobility of the SnO2 having the lowest carrier density ( |
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| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.1481192 |