Characterization on microstructures of tungsten/barrier metals (TiN,WNx)/silicon multilayer films
Microstructures of W/barrier metals (TiN,WNx)/Si multilayer films followed by heat treatment were precisely investigated by x-ray diffraction and high-resolution transmission electron microscopy. The analysis results showed that in the W/TiN/Si stacked film having the W (110) and (200) preferred ori...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2002-06, Vol.91 (12), p.9788-9793 |
---|---|
Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 9793 |
---|---|
container_issue | 12 |
container_start_page | 9788 |
container_title | Journal of applied physics |
container_volume | 91 |
creator | Yang, Jun-Mo Choi, Il-Sang Kim, Yong Soo Park, Ju-Chul Lee, Sang-Moo Hong, Tae-Eun Park, Yoon-Beak Lee, Soun-Young Kim, Yil Wook |
description | Microstructures of W/barrier metals (TiN,WNx)/Si multilayer films followed by heat treatment were precisely investigated by x-ray diffraction and high-resolution transmission electron microscopy. The analysis results showed that in the W/TiN/Si stacked film having the W (110) and (200) preferred orientations, the TiN film itself plays a role as a barrier for the reaction of W and Si, whereas in the case of the WNx barrier having the W (110) one, the amorphous SixNy layer with a thickness of a few nanometers works effectively as a barrier, which was formed during the deposition and denudation process of the WNx film. Furthermore, the nanometer-scaled interfacial reaction in the multilayer films was clearly investigated by x-ray photoelectron spectroscopy coupled with chemical etching and an energy-filtered elemental mapping technique. Based on the results, effects of barrier metals on the W preferred orientation and the interfacial reaction were crystallographically and thermodynamically discussed. |
doi_str_mv | 10.1063/1.1479753 |
format | Article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1479753</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1479753</sourcerecordid><originalsourceid>FETCH-LOGICAL-c227t-a663e354b0cc747da30cc3172c6594f7ba64521a6dc270b5fa98db903a5fef8b3</originalsourceid><addsrcrecordid>eNotUEtLxDAYDKJgXT34D3p0wW7zaJrmKMVVYVkvKx7LlzTRSB-SpOD6621xYWDmMDMMg9AtwRuCS5aTDSmEFJydoYTgSmaCc3yOEowpySop5CW6CuELY0IqJhME9Sd40NF49wvRjUM6o3fajyH6ScfJm5CONo3T8BGiGXIF3jvj095E6EJ6d3D7-_f9zzoPrnN6CU9ddB0cZ491XR-u0YWdnebmxCv0tn081M_Z7vXppX7YZZpSETMoS2YYLxTWWhSiBTYLRgTVJZeFFQrKglMCZaupwIpbkFWrJGbArbGVYiu0_u9dtgdvbPPtXQ_-2BDcLN80pDl9w_4AKX1YaQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Characterization on microstructures of tungsten/barrier metals (TiN,WNx)/silicon multilayer films</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Yang, Jun-Mo ; Choi, Il-Sang ; Kim, Yong Soo ; Park, Ju-Chul ; Lee, Sang-Moo ; Hong, Tae-Eun ; Park, Yoon-Beak ; Lee, Soun-Young ; Kim, Yil Wook</creator><creatorcontrib>Yang, Jun-Mo ; Choi, Il-Sang ; Kim, Yong Soo ; Park, Ju-Chul ; Lee, Sang-Moo ; Hong, Tae-Eun ; Park, Yoon-Beak ; Lee, Soun-Young ; Kim, Yil Wook</creatorcontrib><description>Microstructures of W/barrier metals (TiN,WNx)/Si multilayer films followed by heat treatment were precisely investigated by x-ray diffraction and high-resolution transmission electron microscopy. The analysis results showed that in the W/TiN/Si stacked film having the W (110) and (200) preferred orientations, the TiN film itself plays a role as a barrier for the reaction of W and Si, whereas in the case of the WNx barrier having the W (110) one, the amorphous SixNy layer with a thickness of a few nanometers works effectively as a barrier, which was formed during the deposition and denudation process of the WNx film. Furthermore, the nanometer-scaled interfacial reaction in the multilayer films was clearly investigated by x-ray photoelectron spectroscopy coupled with chemical etching and an energy-filtered elemental mapping technique. Based on the results, effects of barrier metals on the W preferred orientation and the interfacial reaction were crystallographically and thermodynamically discussed.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1479753</identifier><language>eng</language><ispartof>Journal of applied physics, 2002-06, Vol.91 (12), p.9788-9793</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c227t-a663e354b0cc747da30cc3172c6594f7ba64521a6dc270b5fa98db903a5fef8b3</citedby><cites>FETCH-LOGICAL-c227t-a663e354b0cc747da30cc3172c6594f7ba64521a6dc270b5fa98db903a5fef8b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Yang, Jun-Mo</creatorcontrib><creatorcontrib>Choi, Il-Sang</creatorcontrib><creatorcontrib>Kim, Yong Soo</creatorcontrib><creatorcontrib>Park, Ju-Chul</creatorcontrib><creatorcontrib>Lee, Sang-Moo</creatorcontrib><creatorcontrib>Hong, Tae-Eun</creatorcontrib><creatorcontrib>Park, Yoon-Beak</creatorcontrib><creatorcontrib>Lee, Soun-Young</creatorcontrib><creatorcontrib>Kim, Yil Wook</creatorcontrib><title>Characterization on microstructures of tungsten/barrier metals (TiN,WNx)/silicon multilayer films</title><title>Journal of applied physics</title><description>Microstructures of W/barrier metals (TiN,WNx)/Si multilayer films followed by heat treatment were precisely investigated by x-ray diffraction and high-resolution transmission electron microscopy. The analysis results showed that in the W/TiN/Si stacked film having the W (110) and (200) preferred orientations, the TiN film itself plays a role as a barrier for the reaction of W and Si, whereas in the case of the WNx barrier having the W (110) one, the amorphous SixNy layer with a thickness of a few nanometers works effectively as a barrier, which was formed during the deposition and denudation process of the WNx film. Furthermore, the nanometer-scaled interfacial reaction in the multilayer films was clearly investigated by x-ray photoelectron spectroscopy coupled with chemical etching and an energy-filtered elemental mapping technique. Based on the results, effects of barrier metals on the W preferred orientation and the interfacial reaction were crystallographically and thermodynamically discussed.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNotUEtLxDAYDKJgXT34D3p0wW7zaJrmKMVVYVkvKx7LlzTRSB-SpOD6621xYWDmMDMMg9AtwRuCS5aTDSmEFJydoYTgSmaCc3yOEowpySop5CW6CuELY0IqJhME9Sd40NF49wvRjUM6o3fajyH6ScfJm5CONo3T8BGiGXIF3jvj095E6EJ6d3D7-_f9zzoPrnN6CU9ddB0cZ491XR-u0YWdnebmxCv0tn081M_Z7vXppX7YZZpSETMoS2YYLxTWWhSiBTYLRgTVJZeFFQrKglMCZaupwIpbkFWrJGbArbGVYiu0_u9dtgdvbPPtXQ_-2BDcLN80pDl9w_4AKX1YaQ</recordid><startdate>20020615</startdate><enddate>20020615</enddate><creator>Yang, Jun-Mo</creator><creator>Choi, Il-Sang</creator><creator>Kim, Yong Soo</creator><creator>Park, Ju-Chul</creator><creator>Lee, Sang-Moo</creator><creator>Hong, Tae-Eun</creator><creator>Park, Yoon-Beak</creator><creator>Lee, Soun-Young</creator><creator>Kim, Yil Wook</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20020615</creationdate><title>Characterization on microstructures of tungsten/barrier metals (TiN,WNx)/silicon multilayer films</title><author>Yang, Jun-Mo ; Choi, Il-Sang ; Kim, Yong Soo ; Park, Ju-Chul ; Lee, Sang-Moo ; Hong, Tae-Eun ; Park, Yoon-Beak ; Lee, Soun-Young ; Kim, Yil Wook</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-a663e354b0cc747da30cc3172c6594f7ba64521a6dc270b5fa98db903a5fef8b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Jun-Mo</creatorcontrib><creatorcontrib>Choi, Il-Sang</creatorcontrib><creatorcontrib>Kim, Yong Soo</creatorcontrib><creatorcontrib>Park, Ju-Chul</creatorcontrib><creatorcontrib>Lee, Sang-Moo</creatorcontrib><creatorcontrib>Hong, Tae-Eun</creatorcontrib><creatorcontrib>Park, Yoon-Beak</creatorcontrib><creatorcontrib>Lee, Soun-Young</creatorcontrib><creatorcontrib>Kim, Yil Wook</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Jun-Mo</au><au>Choi, Il-Sang</au><au>Kim, Yong Soo</au><au>Park, Ju-Chul</au><au>Lee, Sang-Moo</au><au>Hong, Tae-Eun</au><au>Park, Yoon-Beak</au><au>Lee, Soun-Young</au><au>Kim, Yil Wook</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization on microstructures of tungsten/barrier metals (TiN,WNx)/silicon multilayer films</atitle><jtitle>Journal of applied physics</jtitle><date>2002-06-15</date><risdate>2002</risdate><volume>91</volume><issue>12</issue><spage>9788</spage><epage>9793</epage><pages>9788-9793</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Microstructures of W/barrier metals (TiN,WNx)/Si multilayer films followed by heat treatment were precisely investigated by x-ray diffraction and high-resolution transmission electron microscopy. The analysis results showed that in the W/TiN/Si stacked film having the W (110) and (200) preferred orientations, the TiN film itself plays a role as a barrier for the reaction of W and Si, whereas in the case of the WNx barrier having the W (110) one, the amorphous SixNy layer with a thickness of a few nanometers works effectively as a barrier, which was formed during the deposition and denudation process of the WNx film. Furthermore, the nanometer-scaled interfacial reaction in the multilayer films was clearly investigated by x-ray photoelectron spectroscopy coupled with chemical etching and an energy-filtered elemental mapping technique. Based on the results, effects of barrier metals on the W preferred orientation and the interfacial reaction were crystallographically and thermodynamically discussed.</abstract><doi>10.1063/1.1479753</doi><tpages>6</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0021-8979 |
ispartof | Journal of applied physics, 2002-06, Vol.91 (12), p.9788-9793 |
issn | 0021-8979 1089-7550 |
language | eng |
recordid | cdi_crossref_primary_10_1063_1_1479753 |
source | AIP Journals Complete; AIP Digital Archive |
title | Characterization on microstructures of tungsten/barrier metals (TiN,WNx)/silicon multilayer films |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T04%3A03%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Characterization%20on%20microstructures%20of%20tungsten/barrier%20metals%20(TiN,WNx)/silicon%20multilayer%20films&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Yang,%20Jun-Mo&rft.date=2002-06-15&rft.volume=91&rft.issue=12&rft.spage=9788&rft.epage=9793&rft.pages=9788-9793&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1479753&rft_dat=%3Ccrossref%3E10_1063_1_1479753%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |