Characterization on microstructures of tungsten/barrier metals (TiN,WNx)/silicon multilayer films
Microstructures of W/barrier metals (TiN,WNx)/Si multilayer films followed by heat treatment were precisely investigated by x-ray diffraction and high-resolution transmission electron microscopy. The analysis results showed that in the W/TiN/Si stacked film having the W (110) and (200) preferred ori...
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Veröffentlicht in: | Journal of applied physics 2002-06, Vol.91 (12), p.9788-9793 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Microstructures of W/barrier metals (TiN,WNx)/Si multilayer films followed by heat treatment were precisely investigated by x-ray diffraction and high-resolution transmission electron microscopy. The analysis results showed that in the W/TiN/Si stacked film having the W (110) and (200) preferred orientations, the TiN film itself plays a role as a barrier for the reaction of W and Si, whereas in the case of the WNx barrier having the W (110) one, the amorphous SixNy layer with a thickness of a few nanometers works effectively as a barrier, which was formed during the deposition and denudation process of the WNx film. Furthermore, the nanometer-scaled interfacial reaction in the multilayer films was clearly investigated by x-ray photoelectron spectroscopy coupled with chemical etching and an energy-filtered elemental mapping technique. Based on the results, effects of barrier metals on the W preferred orientation and the interfacial reaction were crystallographically and thermodynamically discussed. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.1479753 |