Characterization on microstructures of tungsten/barrier metals (TiN,WNx)/silicon multilayer films

Microstructures of W/barrier metals (TiN,WNx)/Si multilayer films followed by heat treatment were precisely investigated by x-ray diffraction and high-resolution transmission electron microscopy. The analysis results showed that in the W/TiN/Si stacked film having the W (110) and (200) preferred ori...

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Veröffentlicht in:Journal of applied physics 2002-06, Vol.91 (12), p.9788-9793
Hauptverfasser: Yang, Jun-Mo, Choi, Il-Sang, Kim, Yong Soo, Park, Ju-Chul, Lee, Sang-Moo, Hong, Tae-Eun, Park, Yoon-Beak, Lee, Soun-Young, Kim, Yil Wook
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Sprache:eng
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Zusammenfassung:Microstructures of W/barrier metals (TiN,WNx)/Si multilayer films followed by heat treatment were precisely investigated by x-ray diffraction and high-resolution transmission electron microscopy. The analysis results showed that in the W/TiN/Si stacked film having the W (110) and (200) preferred orientations, the TiN film itself plays a role as a barrier for the reaction of W and Si, whereas in the case of the WNx barrier having the W (110) one, the amorphous SixNy layer with a thickness of a few nanometers works effectively as a barrier, which was formed during the deposition and denudation process of the WNx film. Furthermore, the nanometer-scaled interfacial reaction in the multilayer films was clearly investigated by x-ray photoelectron spectroscopy coupled with chemical etching and an energy-filtered elemental mapping technique. Based on the results, effects of barrier metals on the W preferred orientation and the interfacial reaction were crystallographically and thermodynamically discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1479753