Resonant tunneling through metal (Ag–Ti)/insulator (MgO) triple barrier structures

Resonant tunneling through metal (Ag–Ti)/insulator (MgO) triple barrier structures has been demonstrated. The multilayers with the triple barrier structures were epitaxially grown on MgO (001) substrates under 473 K by the electron beam evaporation method. For the measurement of current–voltage char...

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Veröffentlicht in:Applied physics letters 2002-05, Vol.80 (18), p.3382-3384
1. Verfasser: Kado, T.
Format: Artikel
Sprache:eng
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Zusammenfassung:Resonant tunneling through metal (Ag–Ti)/insulator (MgO) triple barrier structures has been demonstrated. The multilayers with the triple barrier structures were epitaxially grown on MgO (001) substrates under 473 K by the electron beam evaporation method. For the measurement of current–voltage characteristics, the mesa-isolated diodes were fabricated by photolithography. The observed current peaks in the current–voltage characteristics of the diodes could be explained as the resonant tunneling current.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1476707