Resonant tunneling through metal (Ag–Ti)/insulator (MgO) triple barrier structures
Resonant tunneling through metal (Ag–Ti)/insulator (MgO) triple barrier structures has been demonstrated. The multilayers with the triple barrier structures were epitaxially grown on MgO (001) substrates under 473 K by the electron beam evaporation method. For the measurement of current–voltage char...
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Veröffentlicht in: | Applied physics letters 2002-05, Vol.80 (18), p.3382-3384 |
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Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Resonant tunneling through metal (Ag–Ti)/insulator (MgO) triple barrier structures has been demonstrated. The multilayers with the triple barrier structures were epitaxially grown on MgO (001) substrates under 473 K by the electron beam evaporation method. For the measurement of current–voltage characteristics, the mesa-isolated diodes were fabricated by photolithography. The observed current peaks in the current–voltage characteristics of the diodes could be explained as the resonant tunneling current. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1476707 |