Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection

Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection

We report on the fabrication and characterization of low dark-current GaN metal–semiconductor–metal (MSM) photodiodes. Their quantum efficiency in the vacuum-ultraviolet range has been analyzed, demonstrating that these devices are an excellent choice for high-energy photodetection. Models to explai...

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Veröffentlicht in:Applied physics letters 2002-04, Vol.80 (17), p.3198-3200
Hauptverfasser: Monroy, E., Palacios, T., Hainaut, O., Omnès, F., Calle, F., Hochedez, J.-F.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report on the fabrication and characterization of low dark-current GaN metal–semiconductor–metal (MSM) photodiodes. Their quantum efficiency in the vacuum-ultraviolet range has been analyzed, demonstrating that these devices are an excellent choice for high-energy photodetection. Models to explain and control the performance as a function of residual doping and geometry are applied to GaN-based MSM photodiodes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1475362