Blocking reactions between indium-tin oxide and poly (3,4-ethylene dioxythiophene):poly(styrene sulphonate) with a self-assembly monolayer

In the fabrication of polymeric electroluminescent devices with indium-tin oxide (ITO) as anode, indium contamination of the polymers can greatly degrade the device performance. In the present study, we have used x-ray photoelectron spectroscopy to measure indium incorporation in poly(3,4-ethylene d...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2002-04, Vol.80 (15), p.2788-2790
Hauptverfasser: Wong, K. W., Yip, H. L., Luo, Y., Wong, K. Y., Lau, W. M., Low, K. H., Chow, H. F., Gao, Z. Q., Yeung, W. L., Chang, C. C.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In the fabrication of polymeric electroluminescent devices with indium-tin oxide (ITO) as anode, indium contamination of the polymers can greatly degrade the device performance. In the present study, we have used x-ray photoelectron spectroscopy to measure indium incorporation in poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate), referred to as PEDOT:PSS, which were spincast on bare ITO and encapsulated ITO. We found that the deposition of a self-assembled monolayer of alkylsiloxanes on ITO prior to spincasting PEDOT:PSS was effective and practical in blocking the reactions between ITO and PEDOT:PSS.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1469220