Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy

Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy

Interstitial Fe57m atoms excited in the 14.4 keV Mössbauer state have been created in silicon at 400–800 K as a result of the recoil imparted on these daughter atoms in the β− decay of ion-implanted, substitutional Mn57. Diffusional jumps of the interstitial Fe57m cause a line broadening in their Mö...

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Veröffentlicht in:Applied physics letters 2002-04, Vol.80 (15), p.2657-2659
Hauptverfasser: Gunnlaugsson, H. P., Weyer, G., Dietrich, M., Fanciulli, M., Bharuth-Ram, K., Sielemann, R.
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container_end_page 2659
container_issue 15
container_start_page 2657
container_title Applied physics letters
container_volume 80
creator Gunnlaugsson, H. P.
Weyer, G.
Dietrich, M.
Fanciulli, M.
Bharuth-Ram, K.
Sielemann, R.
description Interstitial Fe57m atoms excited in the 14.4 keV Mössbauer state have been created in silicon at 400–800 K as a result of the recoil imparted on these daughter atoms in the β− decay of ion-implanted, substitutional Mn57. Diffusional jumps of the interstitial Fe57m cause a line broadening in their Mössbauer spectra, which is directly proportional to their diffusivity. Thus, the charge-state-dependent diffusivity has been determined in differently doped material.
doi_str_mv 10.1063/1.1469216
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1469216</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1469216</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-2e37a099275064269f33d6259008c3944e33a9b29bbd7d3acd7bd12dbea2eb323</originalsourceid><addsrcrecordid>eNotkM9KxDAYxIMoWFcPvkGuHrom-dp0c5TFdYUVL3ou-fPFjdS2JFmhL-YL-GJ2cU_D_GBmYAi55WzJmYR7vuSVVILLM1Jw1jQlcL46JwVjDEqpan5JrlL6nG0tAArSrfc6fiBNWWekDkfsHfYW6eBp3s8keH9I4Tvk6YhCnzGmHHLQHd3g7GkKXbBDP2cz2oyOmom-_P6kZPQBI03jTOOQ7DBO1-TC6y7hzUkX5H3z-LbelrvXp-f1w660QqhcCoRGM6VEUzNZCak8gJOiVoytLKiqQgCtjFDGuMaBtq4xjgtnUAs0IGBB7v577TycIvp2jOFLx6nlrD3e1PL2dBP8AUVNXDE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Gunnlaugsson, H. P. ; Weyer, G. ; Dietrich, M. ; Fanciulli, M. ; Bharuth-Ram, K. ; Sielemann, R.</creator><creatorcontrib>Gunnlaugsson, H. P. ; Weyer, G. ; Dietrich, M. ; Fanciulli, M. ; Bharuth-Ram, K. ; Sielemann, R. ; ISOLDE collaboration</creatorcontrib><description>Interstitial Fe57m atoms excited in the 14.4 keV Mössbauer state have been created in silicon at 400–800 K as a result of the recoil imparted on these daughter atoms in the β− decay of ion-implanted, substitutional Mn57. Diffusional jumps of the interstitial Fe57m cause a line broadening in their Mössbauer spectra, which is directly proportional to their diffusivity. Thus, the charge-state-dependent diffusivity has been determined in differently doped material.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1469216</identifier><language>eng</language><ispartof>Applied physics letters, 2002-04, Vol.80 (15), p.2657-2659</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-2e37a099275064269f33d6259008c3944e33a9b29bbd7d3acd7bd12dbea2eb323</citedby><cites>FETCH-LOGICAL-c229t-2e37a099275064269f33d6259008c3944e33a9b29bbd7d3acd7bd12dbea2eb323</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Gunnlaugsson, H. P.</creatorcontrib><creatorcontrib>Weyer, G.</creatorcontrib><creatorcontrib>Dietrich, M.</creatorcontrib><creatorcontrib>Fanciulli, M.</creatorcontrib><creatorcontrib>Bharuth-Ram, K.</creatorcontrib><creatorcontrib>Sielemann, R.</creatorcontrib><creatorcontrib>ISOLDE collaboration</creatorcontrib><title>Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy</title><title>Applied physics letters</title><description>Interstitial Fe57m atoms excited in the 14.4 keV Mössbauer state have been created in silicon at 400–800 K as a result of the recoil imparted on these daughter atoms in the β− decay of ion-implanted, substitutional Mn57. Diffusional jumps of the interstitial Fe57m cause a line broadening in their Mössbauer spectra, which is directly proportional to their diffusivity. Thus, the charge-state-dependent diffusivity has been determined in differently doped material.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNotkM9KxDAYxIMoWFcPvkGuHrom-dp0c5TFdYUVL3ou-fPFjdS2JFmhL-YL-GJ2cU_D_GBmYAi55WzJmYR7vuSVVILLM1Jw1jQlcL46JwVjDEqpan5JrlL6nG0tAArSrfc6fiBNWWekDkfsHfYW6eBp3s8keH9I4Tvk6YhCnzGmHHLQHd3g7GkKXbBDP2cz2oyOmom-_P6kZPQBI03jTOOQ7DBO1-TC6y7hzUkX5H3z-LbelrvXp-f1w660QqhcCoRGM6VEUzNZCak8gJOiVoytLKiqQgCtjFDGuMaBtq4xjgtnUAs0IGBB7v577TycIvp2jOFLx6nlrD3e1PL2dBP8AUVNXDE</recordid><startdate>20020415</startdate><enddate>20020415</enddate><creator>Gunnlaugsson, H. P.</creator><creator>Weyer, G.</creator><creator>Dietrich, M.</creator><creator>Fanciulli, M.</creator><creator>Bharuth-Ram, K.</creator><creator>Sielemann, R.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20020415</creationdate><title>Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy</title><author>Gunnlaugsson, H. P. ; Weyer, G. ; Dietrich, M. ; Fanciulli, M. ; Bharuth-Ram, K. ; Sielemann, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-2e37a099275064269f33d6259008c3944e33a9b29bbd7d3acd7bd12dbea2eb323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gunnlaugsson, H. P.</creatorcontrib><creatorcontrib>Weyer, G.</creatorcontrib><creatorcontrib>Dietrich, M.</creatorcontrib><creatorcontrib>Fanciulli, M.</creatorcontrib><creatorcontrib>Bharuth-Ram, K.</creatorcontrib><creatorcontrib>Sielemann, R.</creatorcontrib><creatorcontrib>ISOLDE collaboration</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gunnlaugsson, H. P.</au><au>Weyer, G.</au><au>Dietrich, M.</au><au>Fanciulli, M.</au><au>Bharuth-Ram, K.</au><au>Sielemann, R.</au><aucorp>ISOLDE collaboration</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy</atitle><jtitle>Applied physics letters</jtitle><date>2002-04-15</date><risdate>2002</risdate><volume>80</volume><issue>15</issue><spage>2657</spage><epage>2659</epage><pages>2657-2659</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Interstitial Fe57m atoms excited in the 14.4 keV Mössbauer state have been created in silicon at 400–800 K as a result of the recoil imparted on these daughter atoms in the β− decay of ion-implanted, substitutional Mn57. Diffusional jumps of the interstitial Fe57m cause a line broadening in their Mössbauer spectra, which is directly proportional to their diffusivity. Thus, the charge-state-dependent diffusivity has been determined in differently doped material.</abstract><doi>10.1063/1.1469216</doi><tpages>3</tpages></addata></record>
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title Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T06%3A17%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Charge%20state%20dependence%20of%20the%20diffusivity%20of%20interstitial%20Fe%20in%20silicon%20detected%20by%20M%C3%B6ssbauer%20spectroscopy&rft.jtitle=Applied%20physics%20letters&rft.au=Gunnlaugsson,%20H.%20P.&rft.aucorp=ISOLDE%20collaboration&rft.date=2002-04-15&rft.volume=80&rft.issue=15&rft.spage=2657&rft.epage=2659&rft.pages=2657-2659&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1469216&rft_dat=%3Ccrossref%3E10_1063_1_1469216%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true