Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy

Interstitial Fe57m atoms excited in the 14.4 keV Mössbauer state have been created in silicon at 400–800 K as a result of the recoil imparted on these daughter atoms in the β− decay of ion-implanted, substitutional Mn57. Diffusional jumps of the interstitial Fe57m cause a line broadening in their Mössbauer spectra, which is directly proportional to their diffusivity. Thus, the charge-state-dependent diffusivity has been determined in differently doped material.