GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

We have demonstrated surface-emitting GaN-based diodes with a buried tunnel junction (TJ) current aperture. The current confinement aperture for lateral injection current was defined by mesa etch of a TJ structure and regrowth of current blocking layer surrounding the TJ mesa. Lateral electron curre...

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Veröffentlicht in:Applied physics letters 2002-03, Vol.80 (11), p.1933-1935
Hauptverfasser: Jeon, Seong-Ran, Oh, Chang Sok, Yang, Jeon-Wook, Yang, Gye Mo, Yoo, Byueng-Su
Format: Artikel
Sprache:eng
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Zusammenfassung:We have demonstrated surface-emitting GaN-based diodes with a buried tunnel junction (TJ) current aperture. The current confinement aperture for lateral injection current was defined by mesa etch of a TJ structure and regrowth of current blocking layer surrounding the TJ mesa. Lateral electron current drives a tunnel contact junction providing hole injection into the active region. The very uniform light emission just through a buried TJ aperture represents that the buried TJ structure acts very effectively as a confinement aperture of lateral current injection, particularly in GaN-based vertical-cavity surface-emitting lasers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1459487