Spin polarization contrast observed in GaAs by force-detected nuclear magnetic resonance

Spin polarization contrast observed in GaAs by force-detected nuclear magnetic resonance

We applied the technique of force-detected nuclear magnetic resonance to observe Ga71, Ga69, and As75 in GaAs. The nuclear spin-lattice relaxation time is 21±5 min for Ga69 at ∼5 K and 4.6 T. We have exploited this long relaxation time to first create and then observe spatially varying nuclear spin...

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Veröffentlicht in:Applied physics letters 2002-03, Vol.80 (10), p.1794-1796
Hauptverfasser: Thurber, Kent R., Harrell, Lee E., Fainchtein, Raúl, Smith, Doran D.
Format: Artikel
Sprache:eng
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Zusammenfassung:We applied the technique of force-detected nuclear magnetic resonance to observe Ga71, Ga69, and As75 in GaAs. The nuclear spin-lattice relaxation time is 21±5 min for Ga69 at ∼5 K and 4.6 T. We have exploited this long relaxation time to first create and then observe spatially varying nuclear spin polarization within the sample, demonstrating a form of contrast for magnetic resonance force microscopy. Such nuclear spin contrast could be used to indirectly image electron spin polarization in GaAs-based spintronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1458688